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| SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Analog Switch Applications * * Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD Tch Tstg Rating 20 10 100 200 100 150 -55~150 Unit V V mA mW C C Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA 2-1B1B Marking 3 Equivalent Circuit 3 Weight: 2.2 mg (typ.) DS 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2002-01-17 SSM3K16TE Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth 1/2Yfs1/2 Test Condition VGS = 10 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V Drain-Source ON resistance RDS (ON) ID = 10 mA, VGS = 2.5 V ID = 1 mA, VGS = 1.5 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V Min 3/4 20 3/4 0.6 40 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 1.5 2.2 5.2 9.3 4.5 9.8 70 125 Max 1 3/4 1 1.1 3/4 3.0 4.0 15 3/4 3/4 3/4 3/4 3/4 pF pF pF ns W Unit mA V mA V mS Switching Time Test Circuit (a) Test circuit 2.5 V 0 10 ms VDD = 3 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 W) Common Source Ta = 25C OUT IN 50 9 RL VDD 0V 10% (b) VIN 2.5 V 90% (c) VOUT VDD 10% 90% tr ton toff tf VDS (ON) Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of 1.5 V or higher to turn on this product. 2 2002-01-17 SSM3K16TE ID - VDS 250 2.5 200 43 10 2.3 2.1 1.9 150 Common source Ta = 25C 100 Ta = 100C 1000 Common source VDS = 3 V ID - VGS (mA) ID Drain current (mA) Drain current ID 10 100 1.7 25C 1 -25C 50 1.5 VGS = 1.3 V 0.1 0 0 0.5 1 1.5 2 0.01 0 1 2 3 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS (ON) - ID 12 Common source Ta = 25C 10 5 6 RDS (ON) - VGS Common source ID = 10 mA Drain-Source on resistance RDS (ON) (W) 8 VGS = 1.5 V Drain-Source on resistance RDS (ON) (W) 4 6 3 Ta = 100C 25C 1 -25C 4 2.5 V 2 4V 0 1 10 100 1000 2 0 0 2 4 6 8 10 Drain current ID (mA) Gate-Source voltage VGS (V) RDS (ON) - Ta 8 Common source 2 Common source ID = 0.1 mA VDS = 3 V Vth - Ta (V) Drain-Source on resistance RDS (ON) (W) VGS = 1.5 V, ID = 1 mA 1.6 Gate threshold voltage Vth 125 150 6 1.2 4 2.5 V, 10 mA 2 0.8 4 V, 10 mA 0.4 0 -25 0 25 50 75 100 0 -25 0 25 50 75 100 125 150 Ambient temperature Ta (C) Ambient temperature Ta (C) 3 2002-01-17 SSM3K16TE iYfsi - ID 500 300 Common source VDS = 3 V Ta = 25C 100 50 30 250 Common source VGS = 0 V Ta = 25C D 150 G S 100 IDR - VDS (mA) Drain reverse current IDR Forward transfer admittance iYfsi (mS) 200 IDR 10 5 3 50 1 1 10 100 1000 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 Drain current ID (mA) Drain-Source voltage VDS (V) C - VDS 100 50 30 5000 3000 toff t - ID Common source VDD = 3 V VGS = 0~2.5 V Ta = 25C (pF) 10 (ns) 1000 500 300 tf Capacitance C 5 3 Common source 1 VGS = 0 V f = 1 MHz 0.5 Ta = 25C 0.3 0.1 0.3 0.5 1 3 5 10 Crss Switching time Ciss Coss t 100 ton 50 30 tr 30 50 100 Drain-Source voltage VDS (V) 10 0.1 1 10 100 Drain current ID (mA) PD - Ta 250 (mW) PD Drain power dissipation 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (C) 4 2002-01-17 SSM3K16TE RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2002-01-17 |
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